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20M10 B7671 C2412 LRS1805A BT849A 2SB1070A 474ML 6707MT
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  smd type sot-523 unit: mm 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1.6 +0.15 -0.15 0.3 +0.25 -0.05 0.5 +0.1 -0.1 0.75 +0.05 -0.05 0.8 +0.05 -0.05 0.1 +0.01 -0.01 0.8 +0.1 -0.1 0.35 0.55 1 2 3 1. base 2. emitter 3. collecter features low current (max. 100 ma) low voltage (max. 45 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current (dc) i c -100 ma peak collector current i cm -200 ma power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -65to+150 marking no. kc857at kc857bt kc857ct marking 3e 3f 3g electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb =- 30 v -15 na i e =0;v cb =-30v;t j = 150 -5 a emitter cut-off current i ebo i c =0;v eb = -5 v -100 na kc857at 125 250 kc857bt 220 475 kc857ct 420 800 i c =-10ma;i b = -0.5 ma -200 mv i c = -100 ma; i b =- 5 ma; * -400 mv i c =-2ma;v ce = -5 v -600 -750 mv i c =-10ma;v ce = -5 v -820 mv collector capacitance c c i e =i e =0;v cb = -10 v; f = 1 mhz 2.5 pf emitter capacitance c e i c =i c =0;v eb = -500 mv; f = 1 mhz 10 pf noise figure f i c = -200 a; v ce =-5v;r s =2k ;f = 1 khz; b = 200 hz 10 db transition frequency f t i c =-10ma;v ce = -5 v; f = 100 mhz 100 mhz * pulse test: tp 300 ms; 0.02. v cesat collector-emitter saturation voltage v be base-emitter voltage i c =-2ma;v ce =-5v i cbo collector cut-off current h fe dc current gain kc857t (bc857t) sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123


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